SML resist processing for high-aspect-ratio and high-sensitivity electron beam lithography.
Nanoscale Res Lett
; 8(1): 139, 2013 Mar 27.
Article
em En
| MEDLINE
| ID: mdl-23531370
ABSTRACT
A detailed process characterization of SML electron beam resist for high-aspect-ratio nanopatterning at high sensitivity is presented. SML contrast curves were generated for methyl isobutyl ketone (MIBK), MIBK/isopropyl alcohol (IPA) (13), IPA/water (73), n-amyl acetate, xylene, and xylene/methanol (31) developers. Using IPA/water developer, the sensitivity of SML was improved considerably and found to be comparable to benchmark polymethylmethacrylate (PMMA) resist without affecting the aspect ratio performance. Employing 30-keV exposures and ultrasonic IPA/water development, an aspect ratio of 91 in 50-nm half-pitch dense grating patterns was achieved representing a greater than two times improvement over PMMA. Through demonstration of 25-nm lift-off features, the pattern transfer performance of SML is also addressed.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Tipo de estudo:
Diagnostic_studies
Idioma:
En
Revista:
Nanoscale Res Lett
Ano de publicação:
2013
Tipo de documento:
Article
País de afiliação:
Canadá