Demonstration of a dressed-state phase gate for trapped ions.
Phys Rev Lett
; 110(26): 263002, 2013 Jun 28.
Article
em En
| MEDLINE
| ID: mdl-23848869
ABSTRACT
We demonstrate a trapped-ion entangling-gate scheme proposed by Bermudez et al. [Phys. Rev. A 85, 040302 (2012)]. Simultaneous excitation of a strong carrier and a single-sideband transition enables deterministic creation of entangled states. The method works for magnetic field-insensitive states, is robust against thermal excitations, includes dynamical decoupling from qubit dephasing errors, and provides simplifications in experimental implementation compared to some other entangling gates with trapped ions. We achieve a Bell state fidelity of 0.974(4) and identify the main sources of error.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Ano de publicação:
2013
Tipo de documento:
Article
País de afiliação:
Estados Unidos