[Preparation and properties of P-type Cd1-xZn(x)Te thin films].
Guang Pu Xue Yu Guang Pu Fen Xi
; 33(5): 1295-8, 2013 May.
Article
em Zh
| MEDLINE
| ID: mdl-23905339
ABSTRACT
Cd1-xZnxTeCu Thin films were prepared by co-evaporation method. X-ray Fluorescence Spectrometry (XRF), scanning electron microscope(SEM), UV-Vis transmission spectra, thermal probe, four-probe method, step profiler and X-ray diffractometer (XRD) were used to investigate the composition, structure, morphology, optical and electrical properties of Cd1-x ZnxTeCu thin films with different doping concentration. The results show that the resistivity of 10% copper doped Cd1-x ZnxTe films increased several magnitude and the conductive type changed from p-type to n-type after annealing. The 20% cu-doped Cdl, Zn,Te films had not obvious change in conductive type and electrical resistivity after annealing and they exhibit good surface morphology. The transmissivity of 30% cu-doped Cd1-x, ZnxTe films decreased seriously below 10% after annealing, which indicate that they are not suitable to be the top cell materials in tandem structure. The 20% and 30% cu-doped Cd1-x Zn, Te films were both p-type conductivity.
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Base de dados:
MEDLINE
Idioma:
Zh
Revista:
Guang Pu Xue Yu Guang Pu Fen Xi
Ano de publicação:
2013
Tipo de documento:
Article
País de afiliação:
China