Facile preparation of an n-type reduced graphene oxide field effect transistor at room temperature.

Wang, Luyang; Park, Younghun; Cui, Peng; Bak, Sora; Lee, Hanleem; Lee, Sae Mi; Lee, Hyoyoung

Wang, Luyang; Park, Younghun; Cui, Peng; Bak, Sora; Lee, Hanleem; Lee, Sae Mi; Lee, Hyoyoung.

Afiliação

Wang L; National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry and Energy Science and SKKU Advanced Institute Nano Technology, Sungkyunkwan University, 2066 Seoburo, Jangan-Gu, Suwon, Gyeonggi-Do 440-746, South Korea. hyoyoung@skku.edu.

Chem Commun (Camb) ; 50(10): 1224-6, 2014 Feb 07.

Article em En | MEDLINE | ID: mdl-24336690

ABSTRACT

ABSTRACT

We introduce a facile method to prepare an n-type reduced graphene oxide field effect transistor at room temperature via a typical Benkeser reduction using lithium and ethylenediamine.

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Chem Commun (Camb) Assunto da revista: QUIMICA Ano de publicação: 2014 Tipo de documento: Article País de afiliação: Coréia do Sul

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