Asymmetrically-gated graphene self-switching diodes as negative differential resistance devices.
Nanoscale
; 6(13): 7628-34, 2014 Jul 07.
Article
em En
| MEDLINE
| ID: mdl-24898112
ABSTRACT
We present an asymmetrically-gated Graphene Self-Switching Diode (G-SSD) as a new negative differential resistance (NDR) device, and study its transport properties using nonequilibrium Green's function (NEGF) formalism and the Extended Huckel (EH) method. The device exhibits a new NDR mechanism, in which a very small quantum tunnelling current is used to control a much-larger channel conduction current, resulting in a very pronounced NDR effect. This NDR effect occurs at low bias voltages, below 1 V, and results in a very high current peak in the µA range and a high peak-to-valley current ratio (PVCR) of 40. The device has an atomically-thin structure with sub-10 nm dimensions, and does not require any doping or external gating. These results suggest that the device has promising potential in applications such as high frequency oscillators, memory devices, and fast switches.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nanoscale
Ano de publicação:
2014
Tipo de documento:
Article
País de afiliação:
Austrália
País de publicação:
ENGLAND
/
ESCOCIA
/
GB
/
GREAT BRITAIN
/
INGLATERRA
/
REINO UNIDO
/
SCOTLAND
/
UK
/
UNITED KINGDOM