Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors.

Sultan, Suhana M; Ditshego, Nonofo J; Gunn, Robert; Ashburn, Peter; Chong, Harold Mh

Sultan, Suhana M; Ditshego, Nonofo J; Gunn, Robert; Ashburn, Peter; Chong, Harold Mh.

Afiliação

Sultan SM; School of Electronics and Computer Science, Nano Research Group, University of Southampton SO17 1BJ, Southampton, UK ; Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81110 Skudai, Johor, Malaysia.
Ditshego NJ; School of Electronics and Computer Science, Nano Research Group, University of Southampton SO17 1BJ, Southampton, UK.
Gunn R; Oxford Instrument Plasma Technology BS49 4AP, Bristol, UK.
Ashburn P; School of Electronics and Computer Science, Nano Research Group, University of Southampton SO17 1BJ, Southampton, UK.
Chong HM; School of Electronics and Computer Science, Nano Research Group, University of Southampton SO17 1BJ, Southampton, UK.

Nanoscale Res Lett ; 9(1): 517, 2014.

Article em En | MEDLINE | ID: mdl-25276107

Palavras-chave

Atomic layer deposition; Field-effect transistor; Top-down fabrication; Zinc oxide nanowire

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2014 Tipo de documento: Article País de afiliação: Malásia País de publicação: Estados Unidos

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