Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition.
Nanoscale Res Lett
; 9(1): 628, 2014.
Article
em En
| MEDLINE
| ID: mdl-25489282
ABSTRACT
The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor deposition. X-ray diffraction, scanning electron microscopy, and scanning transmission electron microscopy show that the films lattice-matched with GaN can have a very smooth surface with good crystallinity and uniform distribution of Al and In in AlInN.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nanoscale Res Lett
Ano de publicação:
2014
Tipo de documento:
Article
País de afiliação:
Taiwan