High-Fidelity Preparation, Gates, Memory, and Readout of a Trapped-Ion Quantum Bit.

Harty, T P; Allcock, D T C; Ballance, C J; Guidoni, L; Janacek, H A; Linke, N M; Stacey, D N; Lucas, D M

Harty, T P; Allcock, D T C; Ballance, C J; Guidoni, L; Janacek, H A; Linke, N M; Stacey, D N; Lucas, D M.

Afiliação

Harty TP; Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom.
Allcock DT; Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom.
Ballance CJ; Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom.
Guidoni L; Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom and Laboratoire Matériaux et Phénomènes Quantiques, University of Paris Diderot, UMR 7162 CNRS, F-75205 Paris, France.
Janacek HA; Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom.
Linke NM; Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom.
Stacey DN; Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom.
Lucas DM; Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom.

Phys Rev Lett ; 113(22): 220501, 2014 Nov 28.

Article em En | MEDLINE | ID: mdl-25494060

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Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2014 Tipo de documento: Article País de afiliação: Reino Unido País de publicação: Estados Unidos

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