Band-gap deformation potential and elasticity limit of semiconductor free-standing nanorods characterized in situ by scanning electron microscope-cathodoluminescence nanospectroscopy.

Watanabe, Kentaro; Nagata, Takahiro; Wakayama, Yutaka; Sekiguchi, Takashi; Erdélyi, Róbert; Volk, János

Watanabe, Kentaro; Nagata, Takahiro; Wakayama, Yutaka; Sekiguchi, Takashi; Erdélyi, Róbert; Volk, János.

Afiliação

Watanabe K; WPI Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
Nagata T; Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan.
Wakayama Y; WPI Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
Sekiguchi T; WPI Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
Erdélyi R; WPI Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
Volk J; §MTA EK Institute of Technical Physics and Materials Science, Konkoly Thege M. út 29-33, 1121 Budapest, Hungary.

ACS Nano ; 9(3): 2989-3001, 2015 Mar 24.

Article em En | MEDLINE | ID: mdl-25689728

Palavras-chave

ZnO; cathodoluminescence; deformation potential; free-standing nanowire; in-situ scanning electron microscopy; plastic deformation; surface elasticity

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2015 Tipo de documento: Article País de afiliação: Japão País de publicação: Estados Unidos

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