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van der Waals epitaxial growth of atomically thin Bi2Se3 and thickness-dependent topological phase transition.
Xu, Shuigang; Han, Yu; Chen, Xiaolong; Wu, Zefei; Wang, Lin; Han, Tianyi; Ye, Weiguang; Lu, Huanhuan; Long, Gen; Wu, Yingying; Lin, Jiangxiazi; Cai, Yuan; Ho, K M; He, Yuheng; Wang, Ning.
Afiliação
  • Xu S; †Department of Physics and the William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
  • Han Y; †Department of Physics and the William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
  • Chen X; †Department of Physics and the William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
  • Wu Z; †Department of Physics and the William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
  • Wang L; †Department of Physics and the William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
  • Han T; ‡Department of Condensed Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, CH1211 Geneva, Switzerland.
  • Ye W; †Department of Physics and the William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
  • Lu H; †Department of Physics and the William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
  • Long G; †Department of Physics and the William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
  • Wu Y; †Department of Physics and the William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
  • Lin J; †Department of Physics and the William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
  • Cai Y; †Department of Physics and the William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
  • Ho KM; †Department of Physics and the William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
  • He Y; †Department of Physics and the William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
  • Wang N; †Department of Physics and the William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
Nano Lett ; 15(4): 2645-51, 2015 Apr 08.
Article em En | MEDLINE | ID: mdl-25807151
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2015 Tipo de documento: Article País de afiliação: China País de publicação: Estados Unidos
Texto completo
Adicionar na Minha BVS
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2015 Tipo de documento: Article País de afiliação: China País de publicação: Estados Unidos