High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites.

Sutter-Fella, Carolin M; Li, Yanbo; Amani, Matin; Ager, Joel W; Toma, Francesca M; Yablonovitch, Eli; Sharp, Ian D; Javey, Ali

Sutter-Fella, Carolin M; Li, Yanbo; Amani, Matin; Ager, Joel W; Toma, Francesca M; Yablonovitch, Eli; Sharp, Ian D; Javey, Ali.

Afiliação

Sutter-Fella CM; Electrical Engineering and Computer Sciences, University of California , Berkeley, California 94720, United States.
Amani M; Electrical Engineering and Computer Sciences, University of California , Berkeley, California 94720, United States.
Ager JW; Materials Science and Engineering, University of California , Berkeley, California 94720, United States.
Yablonovitch E; Electrical Engineering and Computer Sciences, University of California , Berkeley, California 94720, United States.
Javey A; Electrical Engineering and Computer Sciences, University of California , Berkeley, California 94720, United States.

Nano Lett ; 16(1): 800-6, 2016 Jan 13.

Article em En | MEDLINE | ID: mdl-26691065

Palavras-chave

Halide perovskite; quantum yield; tandem device; wide band gap semiconductor

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Estados Unidos País de publicação: Estados Unidos

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