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Anomalous temperature-dependent spin-valley polarization in monolayer WS2.
Hanbicki, A T; Kioseoglou, G; Currie, M; Hellberg, C Stephen; McCreary, K M; Friedman, A L; Jonker, B T.
Afiliação
  • Hanbicki AT; Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375.
  • Kioseoglou G; University of Crete, Heraklion Crete, 71003, Greece.
  • Currie M; Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology Hellas (FORTH), Heraklion Crete, 71110, Greece.
  • Hellberg CS; Optical Sciences Division, Naval Research Laboratory, Washington, DC 20375.
  • McCreary KM; Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375.
  • Friedman AL; Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375.
  • Jonker BT; Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375.
Sci Rep ; 6: 18885, 2016 Jan 05.
Article em En | MEDLINE | ID: mdl-26728976
ABSTRACT
Single layers of transition metal dichalcogenides (TMDs) are direct gap semiconductors with nondegenerate valley indices. An intriguing possibility for these materials is the use of their valley index as an alternate state variable. Several limitations to such a utility include strong intervalley scattering, as well as multiparticle interactions leading to multiple emission channels. We prepare single-layer WS2 films such that the photoluminescence is from either the neutral or charged exciton (trion). After excitation with circularly polarized light, the neutral exciton emission has zero polarization. However, the trion emission has a large polarization (28%) at room temperature. The trion emission also has a unique, non-monotonic temperature dependence that is a consequence of the multiparticle nature of the trion. This temperature dependence enables us to determine that intervalley scattering, electron-hole radiative recombination, and Auger processes are the dominant mechanisms at work in this system. Because this dependence involves trion systems, one can use gate voltages to modulate the polarization (or intensity) emitted from TMD structures.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2016 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2016 Tipo de documento: Article
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