Quantum simulation of the Hubbard model with dopant atoms in silicon.

Salfi, J; Mol, J A; Rahman, R; Klimeck, G; Simmons, M Y; Hollenberg, L C L; Rogge, S

Salfi, J; Mol, J A; Rahman, R; Klimeck, G; Simmons, M Y; Hollenberg, L C L; Rogge, S.

Afiliação

Salfi J; Centre for Quantum Computation and Communication Technology, School of Physics, The University of New South Wales, Sydney, New South Wales 2052, Australia.
Mol JA; Centre for Quantum Computation and Communication Technology, School of Physics, The University of New South Wales, Sydney, New South Wales 2052, Australia.
Rahman R; Department of Electrical Engineering, Purdue University, West Lafayette, Indiana 47906, USA.
Klimeck G; Department of Electrical Engineering, Purdue University, West Lafayette, Indiana 47906, USA.
Simmons MY; Centre for Quantum Computation and Communication Technology, School of Physics, The University of New South Wales, Sydney, New South Wales 2052, Australia.
Hollenberg LC; Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia.
Rogge S; Centre for Quantum Computation and Communication Technology, School of Physics, The University of New South Wales, Sydney, New South Wales 2052, Australia.

Nat Commun ; 7: 11342, 2016 Apr 20.

Article em En | MEDLINE | ID: mdl-27094205

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Austrália País de publicação: Reino Unido

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