Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2.

Lloyd, David; Liu, Xinghui; Christopher, Jason W; Cantley, Lauren; Wadehra, Anubhav; Kim, Brian L; Goldberg, Bennett B; Swan, Anna K; Bunch, J Scott

Lloyd, David; Liu, Xinghui; Christopher, Jason W; Cantley, Lauren; Wadehra, Anubhav; Kim, Brian L; Goldberg, Bennett B; Swan, Anna K; Bunch, J Scott.

Afiliação

Lloyd D; Department of Mechanical Engineering, Boston University , Boston, Massachusetts 02215 United States.
Liu X; Department of Mechanical Engineering, University of Colorado , Boulder, Colorado 80309 United States.
Christopher JW; Department of Physics, Boston University , 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States.
Cantley L; Department of Mechanical Engineering, Boston University , Boston, Massachusetts 02215 United States.
Wadehra A; Department of Materials and Metallurgy, PEC University of Technology , Chandigarh, India 160012.
Kim BL; Department of Mechanical Engineering, Boston University , Boston, Massachusetts 02215 United States.
Goldberg BB; Department of Physics, Boston University , 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States.
Swan AK; Department of Electrical and Computer Engineering, Boston University , 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States.
Bunch JS; Department of Mechanical Engineering, Boston University , Boston, Massachusetts 02215 United States.

Nano Lett ; 16(9): 5836-41, 2016 09 14.

Article em En | MEDLINE | ID: mdl-27509768

Palavras-chave

MoS2; Raman spectroscopy; Strain engineering; bandgap; biaxial strain; photoluminescence

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2016 Tipo de documento: Article