Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors.

Gao, Jian; Kim, Young Duck; Liang, Liangbo; Idrobo, Juan Carlos; Chow, Phil; Tan, Jiawei; Li, Baichang; Li, Lu; Sumpter, Bobby G; Lu, Toh-Ming; Meunier, Vincent; Hone, James; Koratkar, Nikhil

Gao, Jian; Kim, Young Duck; Liang, Liangbo; Idrobo, Juan Carlos; Chow, Phil; Tan, Jiawei; Li, Baichang; Li, Lu; Sumpter, Bobby G; Lu, Toh-Ming; Meunier, Vincent; Hone, James; Koratkar, Nikhil.

Afiliação

Gao J; Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA.
Kim YD; Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA.
Liang L; Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA.
Idrobo JC; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
Chow P; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
Tan J; Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA.
Li B; Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA.
Li L; Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA.
Sumpter BG; Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA.
Lu TM; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
Meunier V; Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA.
Hone J; Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA.
Koratkar N; Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA.

Adv Mater ; 28(44): 9735-9743, 2016 Nov.

Article em En | MEDLINE | ID: mdl-27646967

Palavras-chave

band structure; chemical vapor deposition; electronic properties; monolayer transition-metal dichalcogenides; transition-metal doping

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Adv Mater Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Estados Unidos País de publicação: Alemanha

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