Ultrathin (Bi1-xSbx)2Se3 Field Effect Transistor with Large ON/OFF Ratio.

Liu, Yu-Hung; Chong, Cheong-Wei; FanChiang, Chun-Ming; Huang, Jung-Chun-Andrew; Han, Hsieh-Cheng; Li, Zhongjun; Qiu, Huaili; Li, Yi-Chang; Liu, Chuan-Pu

Ultrathin (Bi_1-xSb_x)₂Se₃ Field Effect Transistor with Large ON/OFF Ratio.

Liu, Yu-Hung; Chong, Cheong-Wei; FanChiang, Chun-Ming; Huang, Jung-Chun-Andrew; Han, Hsieh-Cheng; Li, Zhongjun; Qiu, Huaili; Li, Yi-Chang; Liu, Chuan-Pu.

Afiliação

Huang JC; Taiwan Consortium of Emergent Crystalline Materials (TCECM), Ministry of Science and Technology, Taipei 10622, Taiwan.
Han HC; Research Center for Applied Sciences, Academia Sinica , Taipei 11529, Taiwan.
Li Z; School of Electronic Science and Applied Physics, HeFei University of Technology , Hefei, Anhui 230009, China.
Qiu H; School of Electronic Science and Applied Physics, HeFei University of Technology , Hefei, Anhui 230009, China.

ACS Appl Mater Interfaces ; 9(14): 12859-12864, 2017 Apr 12.

Article em En | MEDLINE | ID: mdl-28318226

Palavras-chave

(Bi1−xSbx)2Se3; SrTiO3; field effect transistor; topological insulator; ultrathin

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2017 Tipo de documento: Article País de publicação: Estados Unidos

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