All-Silicon Switchable Magnetoelectric Effect through Interlayer Exchange Coupling.

Liu, Hang; Sun, Jia-Tao; Fu, Hui-Xia; Sun, Pei-Jie; Feng, Y P; Meng, Sheng

Liu, Hang; Sun, Jia-Tao; Fu, Hui-Xia; Sun, Pei-Jie; Feng, Y P; Meng, Sheng.

Afiliação

Liu H; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Sun JT; University of Chinese Academy of Sciences, Beijing, 100049, China.
Fu HX; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Sun PJ; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Feng YP; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Meng S; Department of Physics, National University of Singapore, Singapore, 117542, Singapore.

Chemphyschem ; 18(14): 1916-1920, 2017 Jul 19.

Article em En | MEDLINE | ID: mdl-28449298

Palavras-chave

density functional theory calculations; interlayer exchange coupling; magnetoelectric effect; silicon thin film; spin-layer locking effect

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Chemphyschem Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2017 Tipo de documento: Article País de afiliação: China País de publicação: Alemanha

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