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Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.
Tsykaniuk, Bogdan I; Nikolenko, Andrii S; Strelchuk, Viktor V; Naseka, Viktor M; Mazur, Yuriy I; Ware, Morgan E; DeCuir, Eric A; Sadovyi, Bogdan; Weyher, Jan L; Jakiela, Rafal; Salamo, Gregory J; Belyaev, Alexander E.
Afiliação
  • Tsykaniuk BI; V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev, 03680, Ukraine. btsykaniuk@gmail.com.
  • Nikolenko AS; V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev, 03680, Ukraine.
  • Strelchuk VV; V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev, 03680, Ukraine.
  • Naseka VM; V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev, 03680, Ukraine.
  • Mazur YI; Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA.
  • Ware ME; Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA.
  • DeCuir EA; Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA.
  • Sadovyi B; Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska str. 29/37, 01-142, Warsaw, Poland.
  • Weyher JL; Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska str. 29/37, 01-142, Warsaw, Poland.
  • Jakiela R; Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02-668, Warsaw, Poland.
  • Salamo GJ; Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA.
  • Belyaev AE; V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev, 03680, Ukraine.
Nanoscale Res Lett ; 12(1): 502, 2017 Aug 21.
Article em En | MEDLINE | ID: mdl-28828578

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Ucrânia País de publicação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Ucrânia País de publicação: Estados Unidos