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Inversion Domain Boundary Induced Stacking and Bandstructure Diversity in Bilayer MoSe2.
Hong, Jinhua; Wang, Cong; Liu, Hongjun; Ren, Xibiao; Chen, Jinglei; Wang, Guanyong; Jia, Jinfeng; Xie, Maohai; Jin, Chuanhong; Ji, Wei; Yuan, Jun; Zhang, Ze.
Afiliação
  • Hong J; Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physics, Renmin University of China , Beijing 100872, China.
  • Wang C; State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China.
  • Liu H; Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physics, Renmin University of China , Beijing 100872, China.
  • Ren X; Physics Department, The University of Hong Kong , Pokfulam Road, Pok Fu Lamm, Hong Kong.
  • Chen J; Institute of Functional Crystals, Tianjin University of Technology , Tianjin 300384, China.
  • Wang G; State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China.
  • Jia J; Physics Department, The University of Hong Kong , Pokfulam Road, Pok Fu Lamm, Hong Kong.
  • Xie M; Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiaotong University , 800 Dongchuan Road, Shanghai 200240, China.
  • Jin C; Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiaotong University , 800 Dongchuan Road, Shanghai 200240, China.
  • Ji W; Physics Department, The University of Hong Kong , Pokfulam Road, Pok Fu Lamm, Hong Kong.
  • Yuan J; State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China.
  • Zhang Z; Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physics, Renmin University of China , Beijing 100872, China.
Nano Lett ; 17(11): 6653-6660, 2017 11 08.
Article em En | MEDLINE | ID: mdl-29020776

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2017 Tipo de documento: Article País de afiliação: China País de publicação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2017 Tipo de documento: Article País de afiliação: China País de publicação: Estados Unidos