Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method.

Chen, Kai-Huang; Kao, Ming-Cheng; Huang, Shou-Jen; Li, Jian-Zhi

Chen, Kai-Huang; Kao, Ming-Cheng; Huang, Shou-Jen; Li, Jian-Zhi.

Afiliação

Chen KH; Department of Electrical Engineering and Computer Science, Tung Fang Design University, Kaohsiung 82941, Taiwan. d9131802@gmail.com.
Kao MC; Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan. kmc@mail.hit hust.edu.tw.
Huang SJ; Department of Electrical Engineering and Computer Science, Tung Fang Design University, Kaohsiung 82941, Taiwan. patrick@mail.tf.edu.tw.
Li JZ; Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan. d9131802@mail.tf.edu.tw.

Materials (Basel) ; 10(12)2017 Dec 12.

Article em En | MEDLINE | ID: mdl-29231867

Palavras-chave

RRAM; SCF; bipolar switching properties; neodymium oxide; thin film

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Materials (Basel) Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Taiwan País de publicação: Suíça

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