Enhanced Metal-Insulator Transition Performance in Scalable Vanadium Dioxide Thin Films Prepared Using a Moisture-Assisted Chemical Solution Approach.

Liang, Weizheng; Gao, Min; Lu, Chang; Zhang, Zhi; Chan, Cheuk Ho; Zhuge, Lanjian; Dai, Jiyan; Yang, Hao; Chen, Chonglin; Park, Bae Ho; Jia, Quanxi; Lin, Yuan

Liang, Weizheng; Gao, Min; Lu, Chang; Zhang, Zhi; Chan, Cheuk Ho; Zhuge, Lanjian; Dai, Jiyan; Yang, Hao; Chen, Chonglin; Park, Bae Ho; Jia, Quanxi; Lin, Yuan.

Afiliação

Liang W; State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu , Sichuan 610054 , P. R. China.
Gao M; State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu , Sichuan 610054 , P. R. China.
Lu C; State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu , Sichuan 610054 , P. R. China.
Zhang Z; Department of Applied Physics , The Hong Kong Polytechnic University , Kowloon , Hong Kong , P. R. China.
Chan CH; Department of Applied Physics , The Hong Kong Polytechnic University , Kowloon , Hong Kong , P. R. China.
Zhuge L; Analysis and Testing Center , Soochow University , Suzhou 215123 , P. R. China.
Dai J; Department of Applied Physics , The Hong Kong Polytechnic University , Kowloon , Hong Kong , P. R. China.
Yang H; College of Science , Nanjing University of Aeronautics and Astronautics , Nanjing 211106 , P. R. China.
Chen C; Department of Physics and Astronomy , University of Texas at San Antonio , San Antonio , Texas 78249 , United States.
Park BH; Division of Quantum Phases & Devices, Department of Physics , Konkuk University , Seoul 143-701 , Korea.
Jia Q; Department of Materials Design and Innovation , University at Buffalo - The State University of New York , Buffalo , New York 14260 , United States.
Lin Y; Division of Quantum Phases & Devices, Department of Physics , Konkuk University , Seoul 143-701 , Korea.

ACS Appl Mater Interfaces ; 10(9): 8341-8348, 2018 Mar 07.

Article em En | MEDLINE | ID: mdl-29372641

Palavras-chave

epitaxy; metal−insulator transition; oxygen stoichiometry; vanadium dioxide films; wafer scale

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2018 Tipo de documento: Article País de publicação: Estados Unidos

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