Using KrF ELA to Improve Gate-Stacked LaAlO3/ZrO2 Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique.

Wu, Chien-Hung; Chang, Kow-Ming; Chen, Yi-Ming; Huang, Bo-Wen; Zhang, Yu-Xin; Wang, Shui-Jinn

Wu, Chien-Hung; Chang, Kow-Ming; Chen, Yi-Ming; Huang, Bo-Wen; Zhang, Yu-Xin; Wang, Shui-Jinn.

Afiliação

Wu CH; Department of Electronics Engineering, Chung Hua University, Hsinchu, Taiwan, 300, R.O.C.
Chang KM; Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, 300, R.O.C.
Chen YM; Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, 300, R.O.C.
Huang BW; Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, 300, R.O.C.
Zhang YX; Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, 300, R.O.C.
Wang SJ; Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, 701, R.O.C.

J Nanosci Nanotechnol ; 18(3): 1917-1921, 2018 Mar 01.

Article em En | MEDLINE | ID: mdl-29448683

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Ano de publicação: 2018 Tipo de documento: Article País de publicação: Estados Unidos

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