Highly Stable Thin-Film Transistors Based on Indium Oxynitride Semiconductor.

Kim, Hyoung-Do; Kim, Jong Heon; Park, Kyung; Park, Yun Chang; Kim, Sunkook; Kim, Yong Joo; Park, Jozeph; Kim, Hyun-Suk

Kim, Hyoung-Do; Kim, Jong Heon; Park, Kyung; Park, Yun Chang; Kim, Sunkook; Kim, Yong Joo; Park, Jozeph; Kim, Hyun-Suk.

Afiliação

Park K; School of Integrated Technology , Yonsei University , Incheon 21983 , Republic of Korea.
Park YC; National Nano Fab Center , Daejeon 305-806 , Republic of Korea.
Kim S; School of Advanced Materials Science and Engineering , Sungkyunkwan University , Suwon 16419 , Republic of Korea.
Park J; Department of Materials Science and Engineering , Korea Advanced Institute of Science and Technology , Daejeon 34141 , Republic of Korea.

ACS Appl Mater Interfaces ; 10(18): 15873-15879, 2018 May 09.

Article em En | MEDLINE | ID: mdl-29667810

Palavras-chave

Indium oxynitride (InON); air stability; density functional theory (DFT); first principle calculation; negative bias illumination stress (NBIS); thin-film transistor

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2018 Tipo de documento: Article País de publicação: Estados Unidos

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