Stochastic IMT (Insulator-Metal-Transition) Neurons: An Interplay of Thermal and Threshold Noise at Bifurcation.

Parihar, Abhinav; Jerry, Matthew; Datta, Suman; Raychowdhury, Arijit

Parihar, Abhinav; Jerry, Matthew; Datta, Suman; Raychowdhury, Arijit.

Afiliação

Parihar A; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, United States.
Jerry M; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, United States.
Datta S; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, United States.
Raychowdhury A; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, United States.

Front Neurosci ; 12: 210, 2018.

Article em En | MEDLINE | ID: mdl-29670508

Palavras-chave

FitzHugh-Nagumo (FHN) neuron model; Ornstein-Uhlenbeck process; insulator-metal transition; stochastic neuron; threshold noise; vanadium-dioxide

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Front Neurosci Ano de publicação: 2018 Tipo de documento: Article País de afiliação: Estados Unidos País de publicação: Suíça

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