Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment.

Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan.

Afiliação

Fan CL; Department of Electronic Engineering, National Taiwan University of Science and Technology, 43 Section 4, Keelung Road, Taipei 106, Taiwan. clfan@mail.ntust.edu.tw.
Tseng FP; Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43 Section 4, Keelung Road, Taipei 106, Taiwan. clfan@mail.ntust.edu.tw.
Tseng CY; Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43 Section 4, Keelung Road, Taipei 106, Taiwan. d10219001@mail.ntust.edu.tw.

Materials (Basel) ; 11(5)2018 May 17.

Article em En | MEDLINE | ID: mdl-29772767

Palavras-chave

HfO2 gate dielectric; a-IGZO TFT; fluorine; plasma treatment; reliability

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Materials (Basel) Ano de publicação: 2018 Tipo de documento: Article País de afiliação: Taiwan País de publicação: Suíça

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