Ballistic One-Dimensional Holes with Strong g-Factor Anisotropy in Germanium.
Nano Lett
; 18(8): 4861-4865, 2018 08 08.
Article
em En
| MEDLINE
| ID: mdl-29995419
ABSTRACT
We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2 e2/ h. At finite magnetic field, the splitting of these plateaus by Zeeman effect reveals largely anisotropic g-factors with absolute values below 1 in the quantum-well plane, and exceeding 10 out-of-plane. This g-factor anisotropy is consistent with a heavy-hole character of the propagating valence-band states, which is in line with a predominant confinement in the growth direction. Remarkably, we observe quantized ballistic conductance in device channels up to 600 nm long. These findings mark an important step toward the realization of novel devices for applications in quantum spintronics.
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MEDLINE
Idioma:
En
Revista:
Nano Lett
Ano de publicação:
2018
Tipo de documento:
Article
País de afiliação:
França