Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Deposition.

Hämäläinen, Jani; Mizohata, Kenichiro; Meinander, Kristoffer; Mattinen, Miika; Vehkamäki, Marko; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku

Hämäläinen, Jani; Mizohata, Kenichiro; Meinander, Kristoffer; Mattinen, Miika; Vehkamäki, Marko; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku.

Afiliação

Hämäläinen J; Department of Chemistry, University of Helsinki, P.O. Box 55, FI-, 00014, Helsinki, Finland.
Mizohata K; Division of Materials Physics, Department of Physics, University of Helsinki, P.O. Box 64, FI-00014, Helsinki, Finland.
Meinander K; Division of Materials Physics, Department of Physics, University of Helsinki, P.O. Box 64, FI-00014, Helsinki, Finland.
Mattinen M; Department of Chemistry, University of Helsinki, P.O. Box 55, FI-, 00014, Helsinki, Finland.
Vehkamäki M; Department of Chemistry, University of Helsinki, P.O. Box 55, FI-, 00014, Helsinki, Finland.
Räisänen J; Division of Materials Physics, Department of Physics, University of Helsinki, P.O. Box 64, FI-00014, Helsinki, Finland.
Ritala M; Department of Chemistry, University of Helsinki, P.O. Box 55, FI-, 00014, Helsinki, Finland.
Leskelä M; Department of Chemistry, University of Helsinki, P.O. Box 55, FI-, 00014, Helsinki, Finland.

Angew Chem Int Ed Engl ; 57(44): 14538-14542, 2018 Oct 26.

Article em En | MEDLINE | ID: mdl-30048031

Palavras-chave

atomic layer deposition (ALD); rhenium; rhenium nitrides; thin films

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Angew Chem Int Ed Engl Ano de publicação: 2018 Tipo de documento: Article País de afiliação: Finlândia

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