Strongly Correlated Charge Transport in Silicon Metal-Oxide-Semiconductor Field-Effect Transistor Quantum Dots.

Seo, M; Roulleau, P; Roche, P; Glattli, D C; Sanquer, M; Jehl, X; Hutin, L; Barraud, S; Parmentier, F D

Seo, M; Roulleau, P; Roche, P; Glattli, D C; Sanquer, M; Jehl, X; Hutin, L; Barraud, S; Parmentier, F D.

Afiliação

Seo M; SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex, France.
Roulleau P; SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex, France.
Roche P; SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex, France.
Glattli DC; SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex, France.
Sanquer M; Université Grenoble Alpes, CEA, INAC-PHELIQS, 38000 Grenoble, France.
Jehl X; Université Grenoble Alpes, CEA, INAC-PHELIQS, 38000 Grenoble, France.
Hutin L; CEA, LETI, Minatec Campus, 38000 Grenoble, France.
Barraud S; CEA, LETI, Minatec Campus, 38000 Grenoble, France.
Parmentier FD; SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex, France.

Phys Rev Lett ; 121(2): 027701, 2018 Jul 13.

Article em En | MEDLINE | ID: mdl-30085716

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2018 Tipo de documento: Article País de afiliação: França

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