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Hexacene Diimides.
Cui, Xiaoping; Xiao, Chengyi; Winands, Thorsten; Koch, Tobias; Li, Yan; Zhang, Lei; Doltsinis, Nikos L; Wang, Zhaohui.
Afiliação
  • Cui X; Key Laboratory of Organic Optoelectronics and Molecular Engineering, Department of Chemistry , Tsinghua University , Beijing 100084 , China.
  • Xiao C; Key Laboratory for Advanced Materials and Institute of Fine Chemicals, School of Chemistry & Molecular Engineering , East China University of Science and Technology , Shanghai 200237 , China.
  • Winands T; College of Energy, Beijing University of Chemical Technology , Beijing 100029 , China.
  • Koch T; Institute for Solid State Theory and Center for Multiscale Theory & Computation , University of Münster , Wilhelm-Klemm-Straße 10 , 48149 Münster , Germany.
  • Li Y; Institute for Solid State Theory and Center for Multiscale Theory & Computation , University of Münster , Wilhelm-Klemm-Straße 10 , 48149 Münster , Germany.
  • Zhang L; Key Laboratory of Organic Solids , Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190 , China.
  • Doltsinis NL; School of Chemistry and Chemical Engineering , University of Chinese Academy of Sciences , Beijing 100049 , China.
  • Wang Z; College of Energy, Beijing University of Chemical Technology , Beijing 100029 , China.
J Am Chem Soc ; 140(38): 12175-12180, 2018 09 26.
Article em En | MEDLINE | ID: mdl-30132666
ABSTRACT
Acene imides are expected to possess smaller band gaps than homologous acenes while maintaining good solubility and stability. However, the design and synthesis of large acene imides are still a big challenge. Herein, we report a one-pot synthesis of hexacene diimides (HDI) by double aromatic annulation between zirconabenzocyclopentene and tetrabrominated naphthalene diimides. HDIs with branched alkyl chains exhibit very good solubility, stability, and much smaller band gaps than hexacene. Organic field-effect transistors (OFETs) based on HDI microribbons exhibit excellent ambipolar transport behavior with the highest electron mobility of 2.17 cm2 V-1 s-1 and hole mobility of 0.30 cm2 V-1 s-1 under ambient conditions.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Am Chem Soc Ano de publicação: 2018 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Am Chem Soc Ano de publicação: 2018 Tipo de documento: Article País de afiliação: China