Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages.

Wang, Cheng; Zhang, Mian; Chen, Xi; Bertrand, Maxime; Shams-Ansari, Amirhassan; Chandrasekhar, Sethumadhavan; Winzer, Peter; Loncar, Marko

Wang, Cheng; Zhang, Mian; Chen, Xi; Bertrand, Maxime; Shams-Ansari, Amirhassan; Chandrasekhar, Sethumadhavan; Winzer, Peter; Loncar, Marko.

Afiliação

Wang C; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA.
Zhang M; Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong, China.
Chen X; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA.
Bertrand M; Nokia Bell Labs, Holmdel, NJ, USA.
Shams-Ansari A; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA.
Chandrasekhar S; LP2N, Institut d'Optique Graduate School, CNRS, University of Bordeaux, Talence, France.
Winzer P; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA.
Loncar M; Department of Electrical Engineering and Computer Science, Howard University, Washington, DC, USA.

Nature ; 562(7725): 101-104, 2018 10.

Article em En | MEDLINE | ID: mdl-30250251

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nature Ano de publicação: 2018 Tipo de documento: Article País de afiliação: Estados Unidos País de publicação: Reino Unido

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