Ultrafast Zero-Bias Surface Photocurrent in Germanium Selenide: Promise for Terahertz Devices and Photovoltaics.

Kushnir, Kateryna; Qin, Ying; Shen, Yuxia; Li, Guangjiang; Fregoso, Benjamin M; Tongay, Sefaattin; Titova, Lyubov V

Kushnir, Kateryna; Qin, Ying; Shen, Yuxia; Li, Guangjiang; Fregoso, Benjamin M; Tongay, Sefaattin; Titova, Lyubov V.

Afiliação

Kushnir K; Department of Physics , Worcester Polytechnic Institute , Worcester , Massachusetts 01609 , United States.
Qin Y; School for Engineering of Matter, Transport and Energy , Arizona State University , Tempe , Arizona 85287 , United States.
Shen Y; School for Engineering of Matter, Transport and Energy , Arizona State University , Tempe , Arizona 85287 , United States.
Li G; Department of Physics , Worcester Polytechnic Institute , Worcester , Massachusetts 01609 , United States.
Fregoso BM; Department of Physics , Kent State University , Kent , Ohio 44242 , United States.
Tongay S; School for Engineering of Matter, Transport and Energy , Arizona State University , Tempe , Arizona 85287 , United States.
Titova LV; Department of Physics , Worcester Polytechnic Institute , Worcester , Massachusetts 01609 , United States.

ACS Appl Mater Interfaces ; 11(5): 5492-5498, 2019 Feb 06.

Article em En | MEDLINE | ID: mdl-30620173

Palavras-chave

GeSe; bulk photovoltaic effect; group-IV monochalcogenides; shift current; terahertz emission spectroscopy

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Estados Unidos País de publicação: Estados Unidos

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