Structural and electrical characterization of monolithic core-double shell n-GaN/Al/p-AlGaN nanowire heterostructures grown by molecular beam epitaxy.

Sadaf, S M; Ra, Y-H; Zhao, S; Szkopek, T; Mi, Z

Sadaf, S M; Ra, Y-H; Zhao, S; Szkopek, T; Mi, Z.

Afiliação

Sadaf SM; Advanced Electronics and Photonics, National Research Council Canada, Ottawa K1A 0R6, Canada. sharif.sadaf@nrc-cnrc.gc.ca and Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
Ra YH; Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada and Optic & Electronic Component Material Center, Korea Institute of Ceramic Engineering & Technology, 101 Soho-ro, Jinju, 52851, Republic of Korea.
Zhao S; Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
Szkopek T; Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
Mi Z; Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada and Department of Electrical Engineering and Computer Science, Center for Photonics and Multiscale Nanomaterials, University of Michigan, Ann Arbor, Michigan 48109, USA. ztm

Nanoscale ; 11(9): 3888-3895, 2019 Mar 07.

Article em En | MEDLINE | ID: mdl-30758042

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Canadá País de publicação: Reino Unido

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