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Microstructure evolution in amorphous Hf-B-Si-C-N high temperature resistant coatings after annealing to 1500 °C in air.
Shen, Y; Jiang, J C; Zeman, P; Símová, V; Vlcek, J; Meletis, E I.
Afiliação
  • Shen Y; Department of Materials Science and Engineering, The University of Texas at Arlington, Arlington, 76019 TX, USA.
  • Jiang JC; Department of Materials Science and Engineering, The University of Texas at Arlington, Arlington, 76019 TX, USA.
  • Zeman P; Department of Physics and NTIS-European Centre of Excellence, University of West Bohemia, Univerzitní 8, 30614, Plzen, Czech Republic.
  • Símová V; Department of Physics and NTIS-European Centre of Excellence, University of West Bohemia, Univerzitní 8, 30614, Plzen, Czech Republic.
  • Vlcek J; Department of Physics and NTIS-European Centre of Excellence, University of West Bohemia, Univerzitní 8, 30614, Plzen, Czech Republic.
  • Meletis EI; Department of Materials Science and Engineering, The University of Texas at Arlington, Arlington, 76019 TX, USA. meletis@uta.edu.
Sci Rep ; 9(1): 3603, 2019 Mar 05.
Article em En | MEDLINE | ID: mdl-30837640
ABSTRACT
Recently, amorphous Hf-B-Si-C-N coatings found to demonstrate superior high-temperature oxidation resistance. The microstructure evolution of two coatings, Hf7B23Si22C6N40 and Hf6B21Si19C4N47, annealed to 1500 °C in air is investigated to understand their high oxidation resistance. The annealed coatings develop a two-layered structure comprising of the original as-deposited film followed by an oxidized layer. In both films, the oxidized layer possesses the same microstructure with HfO2 nanoparticles dispersed in an amorphous SiOx-based matrix. The bottom layer in the Hf6B21Si19C4N47 coating remains amorphous after annealing while Hf7B23Si22C6N40 recrystallized partially showing a nanocrystalline structure of HfB2 and HfN nanoparticles separated by h-Si3N4 and h-BN boundaries. The HfB2 and HfN nanostructures form a sandwich structure with a HfB2 strip being atomically coherent to HfN skins via (111)-Hf monolayers. In spite of the different bottom layer structure, the oxidized/bottom layer interface of both films was found to exhibit a similar microstructure with a fine distribution of HfO2 nanoparticles surrounded by SiO2 quartz boundaries. The high-temperature oxidation resistance of both films is attributed to the particular evolving microstructure consisting of HfO2 nanoparticles within a dense SiOx-based matrix and quartz SiO2 in front of the oxidized/bottom layer interface acting as a barrier for oxygen and thermal diffusion.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Estados Unidos