Ferroelectric-Dielectric Mixed Buffer Layer for Enhanced Electrical Performance of Organic Ferroelectric Memory Transistors.

Kim, Ju-Ryong; Boampong, Amos Amoako; Choi, Yoonseok; Kim, Min-Hoi

Kim, Ju-Ryong; Boampong, Amos Amoako; Choi, Yoonseok; Kim, Min-Hoi.

Afiliação

Kim JR; Department of Creative Convergence Engineering, Hanbat National University, Daejeon, 305-719 Republic of Korea.
Boampong AA; Department of Electronics Engineering, Hanbat National University, Daejeon, 305-719 Republic of Korea.
Choi Y; Department of Electronics Engineering, Hanbat National University, Daejeon, 305-719 Republic of Korea.
Kim MH; Department of Creative Convergence Engineering, Hanbat National University, Daejeon, 305-719 Republic of Korea.

J Nanosci Nanotechnol ; 19(8): 4651-4656, 2019 Aug 01.

Article em En | MEDLINE | ID: mdl-30913763

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Ano de publicação: 2019 Tipo de documento: Article País de publicação: Estados Unidos

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