Engineering High- k/SiGe Interface with ALD Oxide for Selective GeO <sub>x</sub> Reduction.

Kavrik, Mahmut S; Ercius, Peter; Cheung, Joanna; Tang, Kechao; Wang, Qingxiao; Fruhberger, Bernd; Kim, Moon; Taur, Yuan; McIntyre, Paul C; Kummel, Andrew C

Engineering High- k/SiGe Interface with ALD Oxide for Selective GeO _x Reduction.

Kavrik, Mahmut S; Ercius, Peter; Cheung, Joanna; Tang, Kechao; Wang, Qingxiao; Fruhberger, Bernd; Kim, Moon; Taur, Yuan; McIntyre, Paul C; Kummel, Andrew C.

Afiliação

Ercius P; National Center for Electron Microscopy, Molecular Foundry , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States.
Tang K; Materials Science and Engineering , Stanford University , Stanford , California 94305 , United States.
Wang Q; Material Science and Engineering , University of Texas , Dallas , Texas 75080-3021 , United States.
Kim M; Material Science and Engineering , University of Texas , Dallas , Texas 75080-3021 , United States.
McIntyre PC; Materials Science and Engineering , Stanford University , Stanford , California 94305 , United States.

ACS Appl Mater Interfaces ; 11(16): 15111-15121, 2019 Apr 24.

Article em En | MEDLINE | ID: mdl-30938163

Palavras-chave

Al2O3; HfO2 interface trap charge; SiGe CMOS; atomic layer deposition; high-k dielectrics; high-mobility transistor; low-power electronics

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2019 Tipo de documento: Article País de publicação: Estados Unidos

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