Enhanced Reliability of a-IGZO TFTs with a Reduced Feature Size and a Clean Etch-Stopper Layer Structure.

Chung, Jae-Moon; Wu, Fang; Jeong, Seung-Woo; Kim, Ji-Hoon; Xiang, Yong

Chung, Jae-Moon; Wu, Fang; Jeong, Seung-Woo; Kim, Ji-Hoon; Xiang, Yong.

Afiliação

Chung JM; School of Materials and Energy, University of Electronic Science and Technology of China, 2006 Xiyuan Avenue, West High-Tech Zone, Chengdu, 611731, Sichuan, China.
Wu F; Chongqing BOE Optoelectronics Technology Co., Ltd, Chongqing, 400718, China.
Jeong SW; School of Materials and Energy, University of Electronic Science and Technology of China, 2006 Xiyuan Avenue, West High-Tech Zone, Chengdu, 611731, Sichuan, China.
Kim JH; BOE Technology Group Co., Ltd, Beijing, 100176, China.
Xiang Y; Chongqing BOE Optoelectronics Technology Co., Ltd, Chongqing, 400718, China.

Nanoscale Res Lett ; 14(1): 165, 2019 May 16.

Article em En | MEDLINE | ID: mdl-31098841

Palavras-chave

Back channel etch; Etch stopper layer; Gate drive IC on array (GOA); Thin-film transistors (TFTs); a-IGZO

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2019 Tipo de documento: Article País de afiliação: China País de publicação: Estados Unidos

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