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Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors.
Mai, Jiaying; Tang, Naiwei; He, Waner; Zou, Zhengmiao; Luo, Chunlai; Zhang, Aihua; Fan, Zhen; Wu, Sujuan; Zeng, Min; Gao, Jinwei; Zhou, Guofu; Lu, Xubing; Liu, J-M.
Afiliação
  • Mai J; Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University, Guangzhou, 510006, China.
  • Tang N; Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University, Guangzhou, 510006, China.
  • He W; Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University, Guangzhou, 510006, China.
  • Zou Z; Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University, Guangzhou, 510006, China.
  • Luo C; Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University, Guangzhou, 510006, China.
  • Zhang A; Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University, Guangzhou, 510006, China.
  • Fan Z; Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University, Guangzhou, 510006, China.
  • Wu S; Guangdong Provincial Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.
  • Zeng M; Guangdong Provincial Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.
  • Gao J; Guangdong Provincial Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.
  • Zhou G; Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.
  • Lu X; Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University, Guangzhou, 510006, China. luxubing@m.scnu.edu.cn.
  • Liu JM; Guangdong Provincial Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.
Nanoscale Res Lett ; 14(1): 169, 2019 May 21.
Article em En | MEDLINE | ID: mdl-31115786
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2019 Tipo de documento: Article País de afiliação: China País de publicação: Estados Unidos
Texto completo
Adicionar na Minha BVS
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2019 Tipo de documento: Article País de afiliação: China País de publicação: Estados Unidos