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Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.
Che, Jiamang; Shao, Hua; Kou, Jianquan; Tian, Kangkai; Chu, Chunshuang; Hou, Xu; Zhang, Yonghui; Sun, Qian; Zhang, Zi-Hui.
Afiliação
  • Che J; State Key Laboratory of Reliability and Intelligence of Electrical Equipment, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.
  • Shao H; Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.
  • Kou J; State Key Laboratory of Reliability and Intelligence of Electrical Equipment, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.
  • Tian K; Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.
  • Chu C; State Key Laboratory of Reliability and Intelligence of Electrical Equipment, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.
  • Hou X; Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.
  • Zhang Y; State Key Laboratory of Reliability and Intelligence of Electrical Equipment, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.
  • Sun Q; Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.
  • Zhang ZH; State Key Laboratory of Reliability and Intelligence of Electrical Equipment, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.
Nanoscale Res Lett ; 14(1): 268, 2019 Aug 06.
Article em En | MEDLINE | ID: mdl-31388778
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2019 Tipo de documento: Article País de publicação: Estados Unidos
Texto completo
Adicionar na Minha BVS
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2019 Tipo de documento: Article País de publicação: Estados Unidos