Exciton Polarization and Renormalization Effect for Optical Modulation in Monolayer Semiconductors.

Pu, Jiang; Matsuki, Keichiro; Chu, Leiqiang; Kobayashi, Yu; Sasaki, Shogo; Miyata, Yasumitsu; Eda, Goki; Takenobu, Taishi

Pu, Jiang; Matsuki, Keichiro; Chu, Leiqiang; Kobayashi, Yu; Sasaki, Shogo; Miyata, Yasumitsu; Eda, Goki; Takenobu, Taishi.

Afiliação

Pu J; Department of Applied Physics , Nagoya University , Nagoya 464-8603 , Japan.
Matsuki K; Department of Advanced Science and Engineering , Waseda University , Tokyo 169-8555 , Japan.
Chu L; Department of Physics , National University of Singapore , 117551 Singapore.
Kobayashi Y; Centre for Advanced 2D Materials , 117542 Singapore.
Sasaki S; Department of Physics , Tokyo Metropolitan University , Tokyo 192-0397 , Japan.
Miyata Y; Department of Physics , Tokyo Metropolitan University , Tokyo 192-0397 , Japan.
Eda G; Department of Physics , Tokyo Metropolitan University , Tokyo 192-0397 , Japan.
Takenobu T; Department of Physics , National University of Singapore , 117551 Singapore.

ACS Nano ; 13(8): 9218-9226, 2019 Aug 27.

Article em En | MEDLINE | ID: mdl-31394038

Palavras-chave

Stark effect; band gap renormalization; electric double layers; electroluminescence; optical modulation; photoluminescence; transition metal dichalcogenides

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Japão País de publicação: Estados Unidos

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