Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-&#954; Y<sub>2</sub>O<sub>3</sub> on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy.

Cheng, Chiu-Ping; Chen, Wan-Sin; Cheng, Yi-Ting; Wan, Hsien-Wen; Yang, Cheng-Yeh; Pi, Tun-Wen; Kwo, Jueinai; Hong, Minghwei

Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y₂O₃ on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy.

Cheng, Chiu-Ping; Chen, Wan-Sin; Cheng, Yi-Ting; Wan, Hsien-Wen; Yang, Cheng-Yeh; Pi, Tun-Wen; Kwo, Jueinai; Hong, Minghwei.

Afiliação

Cheng CP; Department of Electrophysics, National Chiayi University, Chiayi 60004, Taiwan, ROC.
Chen WS; Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan, ROC.
Cheng YT; Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan, ROC.
Wan HW; Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan, ROC.
Yang CY; Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC.
Pi TW; National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan, ROC.
Kwo J; Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC.
Hong M; Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan, ROC.

ACS Omega ; 3(2): 2111-2118, 2018 Feb 28.

Article em En | MEDLINE | ID: mdl-31458518

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Omega Ano de publicação: 2018 Tipo de documento: Article País de publicação: Estados Unidos

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