Effect of doping Ti on the vacancy trapping mechanism for helium in ZrCo from first principles.

Wang, Qingqing; Kong, Xianggang; Yu, You; Han, Huilei; Sang, Ge; Zhang, Guanghui; Yi, Yougen; Gao, Tao

Wang, Qingqing; Kong, Xianggang; Yu, You; Han, Huilei; Sang, Ge; Zhang, Guanghui; Yi, Yougen; Gao, Tao.

Afiliação

Wang Q; Institute of Atomic and Molecular Physics, Sichuan University, Chengdu, 610064, China. gaotao@scu.edu.cn.
Kong X; College of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu 610225, China.
Yu Y; College of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu 610225, China.
Han H; College of Mathematics, Sichuan University, Chengdu, 610064, China.
Sang G; Science and Technology on Surface Physics and Chemistry Laboratory, P. O. Box 9071-35, Jiangyou 621907, China. angelsg1@126.com.
Zhang G; Science and Technology on Surface Physics and Chemistry Laboratory, P. O. Box 9071-35, Jiangyou 621907, China. angelsg1@126.com.
Yi Y; Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, College of Physics and Electronics, Central South University, Changsha 410083, China.
Gao T; Institute of Atomic and Molecular Physics, Sichuan University, Chengdu, 610064, China. gaotao@scu.edu.cn.

Phys Chem Chem Phys ; 21(37): 20909-20918, 2019 Oct 07.

Article em En | MEDLINE | ID: mdl-31517356

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2019 Tipo de documento: Article País de afiliação: China País de publicação: Reino Unido

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