Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation.

Peng, Ying; Miao, Lei; Gao, Jie; Liu, Chengyan; Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki

Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si_1-x-yGe_xSn_y Thin Films with Boron Ion Implantation.

Peng, Ying; Miao, Lei; Gao, Jie; Liu, Chengyan; Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki.

Afiliação

Peng Y; Department of Materials Physics, Graduate School of Engineering, Nagoya University, Nagoya, 464-8603, Japan.
Miao L; Guangxi Key Laboratory of Information Material, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, China.
Gao J; Guangxi Key Laboratory of Information Material, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, China.
Liu C; Guangxi Key Laboratory of Information Material, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, China.
Kurosawa M; Guangxi Key Laboratory of Information Material, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, China.
Nakatsuka O; Department of Materials Physics, Graduate School of Engineering, Nagoya University, Nagoya, 464-8603, Japan. kurosawa@nagoya-u.jp.
Zaima S; PRESTO, Japan Science and Technology Agency, 4-1-8, Honcho, Kawaguchi, Saitama, 332-0012, Japan. kurosawa@nagoya-u.jp.

Sci Rep ; 9(1): 14342, 2019 Oct 04.

Article em En | MEDLINE | ID: mdl-31586102

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Japão País de publicação: Reino Unido

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