Two-dimensional inorganic molecular crystals.

Han, Wei; Huang, Pu; Li, Liang; Wang, Fakun; Luo, Peng; Liu, Kailang; Zhou, Xing; Li, Huiqiao; Zhang, Xiuwen; Cui, Yi; Zhai, Tianyou

Han, Wei; Huang, Pu; Li, Liang; Wang, Fakun; Luo, Peng; Liu, Kailang; Zhou, Xing; Li, Huiqiao; Zhang, Xiuwen; Cui, Yi; Zhai, Tianyou.

Afiliação

Han W; State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), 430074, Wuhan, China.
Huang P; Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Electronic Science and Technology, Shenzhen University, Nanhai Avenue 3688, 518060, Shenzhen, Guangdong, China.
Li L; State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), 430074, Wuhan, China.
Wang F; State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), 430074, Wuhan, China.
Luo P; State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), 430074, Wuhan, China.
Liu K; State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), 430074, Wuhan, China.
Zhou X; State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), 430074, Wuhan, China.
Li H; State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), 430074, Wuhan, China.
Zhang X; Department of Material Science and Engineering, Stanford University, 94305, Stanford, CA, USA.
Cui Y; Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Electronic Science and Technology, Shenzhen University, Nanhai Avenue 3688, 518060, Shenzhen, Guangdong, China.
Zhai T; Department of Material Science and Engineering, Stanford University, 94305, Stanford, CA, USA. yicui@stanford.edu.

Nat Commun ; 10(1): 4728, 2019 10 17.

Article em En | MEDLINE | ID: mdl-31624241

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2019 Tipo de documento: Article País de afiliação: China País de publicação: Reino Unido

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