Publisher Correction: Josephson coupled Ising pairing induced in suspended MoS<sub>2</sub> bilayers by double-side ionic gating.

Zheliuk, O; Lu, J M; Chen, Q H; El Yumin, A A; Golightly, S; Ye, J T

Publisher Correction: Josephson coupled Ising pairing induced in suspended MoS₂ bilayers by double-side ionic gating.

Zheliuk, O; Lu, J M; Chen, Q H; El Yumin, A A; Golightly, S; Ye, J T.

Afiliação

Zheliuk O; Device Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, Groningen, the Netherlands.
Lu JM; Device Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, Groningen, the Netherlands.
Chen QH; High Field Magnet Laboratory, Radboud University, Nijmegen, the Netherlands.
El Yumin AA; State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, China.
Golightly S; Device Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, Groningen, the Netherlands.
Ye JT; Device Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, Groningen, the Netherlands.

Nat Nanotechnol ; 15(1): 80, 2020 Jan.

Article em En | MEDLINE | ID: mdl-31844289

ABSTRACT

ABSTRACT

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Nanotechnol Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Holanda

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