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Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy.
Bae, Sang-Hoon; Lu, Kuangye; Han, Yimo; Kim, Sungkyu; Qiao, Kuan; Choi, Chanyeol; Nie, Yifan; Kim, Hyunseok; Kum, Hyun S; Chen, Peng; Kong, Wei; Kang, Beom-Seok; Kim, Chansoo; Lee, Jaeyong; Baek, Yongmin; Shim, Jaewoo; Park, Jinhee; Joo, Minho; Muller, David A; Lee, Kyusang; Kim, Jeehwan.
Afiliação
  • Bae SH; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Lu K; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Han Y; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim S; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Qiao K; School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
  • Choi C; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Nie Y; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim H; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kum HS; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Chen P; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kong W; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kang BS; Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
  • Kim C; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Lee J; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Baek Y; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Shim J; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Park J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Joo M; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Muller DA; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Lee K; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
Nat Nanotechnol ; 15(4): 272-276, 2020 Apr.
Article em En | MEDLINE | ID: mdl-32042164
ABSTRACT
Although conventional homoepitaxy forms high-quality epitaxial layers1-5, the limited set of material systems for commercially available wafers restricts the range of materials that can be grown homoepitaxially. At the same time, conventional heteroepitaxy of lattice-mismatched systems produces dislocations above a critical strain energy to release the accumulated strain energy as the film thickness increases. The formation of dislocations, which severely degrade electronic/photonic device performances6-8, is fundamentally unavoidable in highly lattice-mismatched epitaxy9-11. Here, we introduce a unique mechanism of relaxing misfit strain in heteroepitaxial films that can enable effective lattice engineering. We have observed that heteroepitaxy on graphene-coated substrates allows for spontaneous relaxation of misfit strain owing to the slippery graphene surface while achieving single-crystalline films by reading the atomic potential from the substrate. This spontaneous relaxation technique could transform the monolithic integration of largely lattice-mismatched systems by covering a wide range of the misfit spectrum to enhance and broaden the functionality of semiconductor devices for advanced electronics and photonics.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Nanotechnol Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Estados Unidos
Texto completo
Adicionar na Minha BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Nanotechnol Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Estados Unidos