Epitaxial Growth and Characterization of AlInN-Based Core-Shell Nanowire Light Emitting Diodes Operating in the Ultraviolet Spectrum.

Velpula, Ravi Teja; Jain, Barsha; Philip, Moab Rajan; Nguyen, Hoang Duy; Wang, Renjie; Nguyen, Hieu Pham Trung

Velpula, Ravi Teja; Jain, Barsha; Philip, Moab Rajan; Nguyen, Hoang Duy; Wang, Renjie; Nguyen, Hieu Pham Trung.

Afiliação

Velpula RT; Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, New Jersey, 07102, United States.
Jain B; Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, New Jersey, 07102, United States.
Philip MR; Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, New Jersey, 07102, United States.
Nguyen HD; Institute of Chemical Technology, Vietnam Academy of Science and Technology, 1 Mac Dinh Chi Street, District 1, Ho Chi Minh City, 700000, Vietnam. nhduy@iams.vast.vn.
Wang R; Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario, L8S 4L7, Canada.
Nguyen HPT; Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, New Jersey, 07102, United States. hieu.p.nguyen@njit.edu.

Sci Rep ; 10(1): 2547, 2020 Feb 13.

Article em En | MEDLINE | ID: mdl-32054926

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Estados Unidos País de publicação: Reino Unido

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