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Optogenetics inspired transition metal dichalcogenide neuristors for in-memory deep recurrent neural networks.
John, Rohit Abraham; Acharya, Jyotibdha; Zhu, Chao; Surendran, Abhijith; Bose, Sumon Kumar; Chaturvedi, Apoorva; Tiwari, Nidhi; Gao, Yang; He, Yongmin; Zhang, Keke K; Xu, Manzhang; Leong, Wei Lin; Liu, Zheng; Basu, Arindam; Mathews, Nripan.
Afiliação
  • John RA; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
  • Acharya J; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
  • Zhu C; HealthTech NTU, Interdisciplinary Graduate Programme, Nanyang Technological University, Singapore, 637335, Singapore.
  • Surendran A; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
  • Bose SK; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
  • Chaturvedi A; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
  • Tiwari N; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
  • Gao Y; Energy Research Institute @ NTU (ERI@N), Nanyang Technological University, Singapore, 637553, Singapore.
  • He Y; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
  • Zhang KK; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
  • Xu M; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
  • Leong WL; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
  • Liu Z; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
  • Basu A; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
  • Mathews N; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore. arindam.basu@ntu.edu.sg.
Nat Commun ; 11(1): 3211, 2020 06 25.
Article em En | MEDLINE | ID: mdl-32587241
Shallow feed-forward networks are incapable of addressing complex tasks such as natural language processing that require learning of temporal signals. To address these requirements, we need deep neuromorphic architectures with recurrent connections such as deep recurrent neural networks. However, the training of such networks demand very high precision of weights, excellent conductance linearity and low write-noise- not satisfied by current memristive implementations. Inspired from optogenetics, here we report a neuromorphic computing platform comprised of photo-excitable neuristors capable of in-memory computations across 980 addressable states with a high signal-to-noise ratio of 77. The large linear dynamic range, low write noise and selective excitability allows high fidelity opto-electronic transfer of weights with a two-shot write scheme, while electrical in-memory inference provides energy efficiency. This method enables implementing a memristive deep recurrent neural network with twelve trainable layers with more than a million parameters to recognize spoken commands with >90% accuracy.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Singapura País de publicação: Reino Unido

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Singapura País de publicação: Reino Unido