A theory of resistivity in Kondo lattice materials: memory function approach.

ABSTRACT

We have theoretically analysed DC resistivity (ρ) in the Kondo-lattice materials using the powerful memory function formalism. The complete temperature evolution of ρ is investigated using the Wölfle-Götze expansion of the memory function. The resistivity in this model originates from spin-flip magnetic scattering of conduction s-electron off the quasi-localized d or f electron spins. We find the famous resistivity upturn in lower temperature regime (k B T ≪ µ d ), where µ d is the effective chemical potential of d-electrons. In the high temperature regime (µ d ≪ k B T) we discover that resistivity scales as cube root of T ([Formula see text]). Our results are in reasonable agreement with the experimental results reported in the literature.