A theory of resistivity in Kondo lattice materials: memory function approach.
J Phys Condens Matter
; 32(42): 425603, 2020 Jul 07.
Article
em En
| MEDLINE
| ID: mdl-32634788
ABSTRACT
We have theoretically analysed DC resistivity (ρ) in the Kondo-lattice materials using the powerful memory function formalism. The complete temperature evolution of ρ is investigated using the Wölfle-Götze expansion of the memory function. The resistivity in this model originates from spin-flip magnetic scattering of conduction s-electron off the quasi-localized d or f electron spins. We find the famous resistivity upturn in lower temperature regime (k B T ⪠µ d ), where µ d is the effective chemical potential of d-electrons. In the high temperature regime (µ d ⪠k B T) we discover that resistivity scales as cube root of T ([Formula see text]). Our results are in reasonable agreement with the experimental results reported in the literature.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
J Phys Condens Matter
Assunto da revista:
BIOFISICA
Ano de publicação:
2020
Tipo de documento:
Article
País de afiliação:
Índia