The effect of Surface energy characterized functional group of self-assembled monolayer for enhancing electrical stability of oxide semiconductor thin film transistor.

Lee, Sung-Eun; Na, Hyunjae; Lee, Eun Goo; Park, Jintaek; Kim, Kyungho; Im, Changik; Park, Jun-Woo; Gong, Yong Jun; Kim, Youn Sang

Lee, Sung-Eun; Na, Hyunjae; Lee, Eun Goo; Park, Jintaek; Kim, Kyungho; Im, Changik; Park, Jun-Woo; Gong, Yong Jun; Kim, Youn Sang.

Afiliação

Lee SE; Program in Nano Science and Technology, Seoul National University, Gwanak-gu, Seoul, Korea (the Republic of).
Na H; Program in Nano Science and Technology, Seoul National University, Gwanak-gu, Seoul, Korea (the Republic of).
Lee EG; Program in Nano Science and Technology, Seoul National University, Gwanak-gu, Seoul, Korea (the Republic of).
Park J; Seoul National University, Gwanak-gu, 08826, Korea (the Republic of).
Kim K; Program in Nano Science and Technology, Seoul National University, Gwanak-gu, Seoul, Korea (the Republic of).
Im C; Program in Nano Science and Technology, Seoul National University, Gwanak-gu, Seoul, Korea (the Republic of).
Park JW; Program in Nano Science and Technology, Seoul National University, Gwanak-gu, Seoul, Korea (the Republic of).
Gong YJ; Program in Nano Science and Technology, Seoul National University, Gwanak-gu, Seoul, Korea (the Republic of).
Kim YS; Program in Nano Science and Technology, Seoul National University, Gwanak-gu, 08826, Korea (the Republic of).

Nanotechnology ; 2020 Aug 07.

Article em En | MEDLINE | ID: mdl-32764196

Palavras-chave

bias stress; hysteresis; oxide thin-film transistor; self-assembled monolayer; surface energy

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2020 Tipo de documento: Article País de publicação: Reino Unido

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