Atomic level termination for passivation and functionalisation of silicon surfaces.

Grant, Nicholas E; Pointon, Alex I; Jefferies, Richard; Hiller, Daniel; Han, Yisong; Beanland, Richard; Walker, Marc; Murphy, John D

Grant, Nicholas E; Pointon, Alex I; Jefferies, Richard; Hiller, Daniel; Han, Yisong; Beanland, Richard; Walker, Marc; Murphy, John D.

Afiliação

Grant NE; School of Engineering, University of Warwick, Coventry, CV4 7AL, UK. nicholas.e.grant@warwick.ac.uk john.d.murphy@warwick.ac.uk.
Pointon AI; School of Engineering, University of Warwick, Coventry, CV4 7AL, UK. nicholas.e.grant@warwick.ac.uk john.d.murphy@warwick.ac.uk.
Jefferies R; School of Engineering, University of Warwick, Coventry, CV4 7AL, UK. nicholas.e.grant@warwick.ac.uk john.d.murphy@warwick.ac.uk.
Hiller D; Research School of Engineering, Australian National University, Canberra, ACT 2601, Australia.
Han Y; Department of Physics, University of Warwick, Coventry, CV4 7AL, UK.
Beanland R; Department of Physics, University of Warwick, Coventry, CV4 7AL, UK.
Walker M; Department of Physics, University of Warwick, Coventry, CV4 7AL, UK.
Murphy JD; School of Engineering, University of Warwick, Coventry, CV4 7AL, UK. nicholas.e.grant@warwick.ac.uk john.d.murphy@warwick.ac.uk.

Nanoscale ; 12(33): 17332-17341, 2020 Aug 28.

Article em En | MEDLINE | ID: mdl-32789341

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Ano de publicação: 2020 Tipo de documento: Article País de publicação: Reino Unido

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